900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Rohm Semiconductor Electronic Components Datasheet

SCS210KGHR Datasheet

SiC Schottky Barrier Diode

No Preview Available !

SCS210KGHR
Automotive Grade SiC Schottky Barrier Diode
lOutline
VR
1200V
TO-220AC
IF 10A
QC 34nC
(1)
Datasheet
lFeatures
1) AEC-Q101 qualified
lInner circuit
(2) (3)
(1)
2) Low forward voltage
3) Negligible recovery time/current
4) Temperature independent switching behavior
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
lApplications
On Board Charger
DC/DC Converter
Wireless Charger
EV Charger
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Tube
-
-
50
Packing code
C
Marking
SCS210KG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Continuous forward current
(Tc= 146°C)
IF
Surge non-
repetitive forward
current
PW=10ms sinusoidal, Tj=25°C
PW=10ms sinusoidal, Tj=150°C
PW=10ms square, Tj=25°C
IFSM
Repetitive peak forward current
IFRM
i2t value
PW=10ms, Tj=25°C
PW=10ms, Tj=150°C
i2dt
Total power dissipation
PD
Junction temperature
Tj
Range of storage temperature
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
Tstg
Value
1200
1200
10
42
31
160
50 *1
9.0
4.8
150*2
175
-55 to +175
Unit
V
V
A
A
A
A
A
A2s
A2s
W
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/5
TSQ50220-SCS210KGHR
29.Jun.2018 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

SCS210KGHR Datasheet

SiC Schottky Barrier Diode

No Preview Available !

SCS210KGHR
Datasheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.2mA
1200
-
-
IF=10A,Tj=25°C
- 1.4 1.6
Forward voltage
VF IF=10A,Tj=150°C
- 1.8 -
IF=10A,Tj=175°C
- 1.9 -
VR=1200V,Tj=25°C
- 10 200
Reverse current
IR VR=1200V,Tj=150°C - 80 -
VR=1200V,Tj=175°C
- 130 -
Total capacitance
VR=1V,f=1MHz
C
VR=800V,f=1MHz
- 530 -
- 43 -
Total capacitive charge
QC VR=800V,di/dt=500A/ms - 34 -
Switching time
tC VR=800V,di/dt=500A/ms - 15 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
lThermal characteristics
Parameter
Thermal resistance
Symbol
Rth(j-c)
Conditions
-
Values
Min. Typ. Max.
- 0.73 0.99
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 1.92E-01
Rth2
5.39E-01
K/W
Rth3 3.91E-05
Symbol
Cth1
Cth2
Cth3
Value
3.18E-03
6.56E-03
1.40E+02
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/5
TSQ50220-SCS210KGHR
29.Jun.2018 - Rev.001


Part Number SCS210KGHR
Description SiC Schottky Barrier Diode
Maker Rohm
PDF Download

SCS210KGHR Datasheet PDF






Similar Datasheet

1 SCS210KGHR SiC Schottky Barrier Diode
Rohm





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy