Datasheet Summary
SiC Schottky Barrier Diode
VR 1200V IF 10A QC 34nC lFeatures
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3) lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS210KG...