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SCS210AG
SiC Schottky Barrier Diode
VR 650V IF 10A QC 15nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
lOutline
TO-220AC
(1)
Datasheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS210AG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VRM 650 V
VR 650 V
IF
10*1
A
40*2
A
IFSM 150*3 A
31*4
A
IFRM
41*5
A
PD
78*6
W
Ju
SCS210AG Datasheet
