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Rohm Semiconductor Electronic Components Datasheet

SCH2080KE Datasheet

N-channel SiC power MOSFET

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SCH2080KE
N-channel SiC power MOSFET co-packaged with SiC-SBD
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
lFeatures
1) Low on-resistance
1200V
80mW
40A
262W
2) Fast switching speed
3) Fast reverse recovery
4) Low VSD
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Induction heating
Motor drives
lOutline
TO-247
lInner circuit
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
*2 SBD
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCH2080KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS-surge*3
PD
Tj
Tstg
Value
1200
40
28
80
-6 to 22
-10 to 26
262
175
-55 to +175
Unit
V
A
A
A
V
V
W
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50210-SCH2080KE
30.Oct.2018 - rev.003


Rohm Semiconductor Electronic Components Datasheet

SCH2080KE Datasheet

N-channel SiC power MOSFET

No Preview Available !

SCH2080KE
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC
Values
Min. Typ. Max.
Unit
- 0.44 0.57 °C/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS+
IGSS-
VGS (th)
VDS = 1200V, VGS = 0V
Tj = 25°C
Tj = 150°C
VGS = +22V, VDS = 0V
VGS = -6V, VDS = 0V
VDS = VGS, ID = 4.4mA
-
-
-
-
1.6
20 400
170 -
- 100
- -100
2.8 4.0
Unit
V
A
nA
nA
V
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50210-SCH2080KE
30.Oct.2018 - rev.003


Part Number SCH2080KE
Description N-channel SiC power MOSFET
Maker Rohm
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SCH2080KE Datasheet PDF






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