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RUR020N02
Nch 20V 2A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
20V 105mW
2A 1W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lApplication Road SW
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
lOutline TSMT3
(1)
lInner circuit
(1) Gate (2) Source
(3) Drain
(2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Symbol
VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg
Value 20 2 6 10 1.0 0.