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RB521G-30
Diodes
Schottky barrier diode
RB521G-30
zApplication Rectifying small power zExternal dimensions (Units : mm)
1.0±0.05
1.4±0.05
zFeatures 1) Ultra small mold type. (VMD2) 2) High reliability
0.6±0.05 0.27±0.03
CATHODE MARK
0.13±0.03
F
zConstruction Silicon epitaxial planer
0.5±0.05
ROHM : VMD2 EIAJ : JEDEC :
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak ∗ Junction temperature Storage temperature
∗ 60Hz, 1cyc.
Symbol VR IO IFSM Tj Tstg
Limits 30 100 1 125 −40~+125
Unit V mA A °C °C
zElectrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.