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RB501SM-30 - Schottky Barrier Diode

Key Features

  • 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.05 f1.50.05 EMD2 lStructure (1) Cathode (2) Anode 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 1.26±0.05 0 2.45±0.1 1.3±0.06 0 0.95±0.06 0 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Emptypocket 4.0±0.1 Conditions 2.0±.

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Datasheet Details

Part number RB501SM-30
Manufacturer ROHM
File Size 498.79 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB501SM-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB501SM-30 Data Sheet lApplication General rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 (1) lLand Size Figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1) Ultra small mold type (EMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type (2) 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79 : Year, week and factory lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.05 f1.50.05 EMD2 lStructure (1) Cathode (2) Anode 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 1.26±0.05 0 2.45±0.1 1.3±0.06 0 0.95±0.06 0 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Emptypocket 4.0±0.1 Conditions 2.0±0.05 fφ0.05.5 0.2 0.76±0.05 Limits Unit Repetitive peak reverse voltage VRM Duty≦0.