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RB088T100 - Schottky Barrier Diode

Key Features

  • 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM D.

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Datasheet Details

Part number RB088T100
Manufacturer ROHM
File Size 493.27 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB088T100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB088T100 Data Sheet lApplication Switching power supply lFeatures 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.