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R6004KNX
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.98Ω
ID
±4.0A
TO-220FM
PD
40W
lFeatures
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±4.0
A
±12
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS*3 PD
0.