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QS5U17 - Small switching Transistors

Features

  • 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. zExternal dimensions (Unit : mm) 1.0MAX 0.85±0.1 0.7±0.1 (4) (5) 2.8±0.2 1.6± 0.2 0.1 0 to 0.1 (1) (2) (3) 0.1 0.4 +.
  • 0.05 0.1 0.16 +.
  • 0.06 Each lead has same dimensions z.

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Datasheet Details

Part number QS5U17
Manufacturer ROHM
File Size 91.35 KB
Description Small switching Transistors
Datasheet download datasheet QS5U17 Datasheet

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QS5U17 Transistors Small switching (30V, 2.0A) QS5U17 zFeatures 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. zExternal dimensions (Unit : mm) 1.0MAX 0.85±0.1 0.7±0.1 (4) (5) 2.8±0.2 1.6± 0.2 0.1 0 to 0.1 (1) (2) (3) 0.1 0.4 + −0.05 0.1 0.16 + −0.
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