PTZ30B Datasheet | ROHM

Features 1) Small surface mounting type. (PMDS) 2) 1W of power can be obtained despite pact size. 3) High surge withstand level. +0.02 - 0.1 0∼0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 Model name (voltage rank) Date of manufacture Ex. 1999.12→9.C !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Junction temperature Storage temperature Symbol P Tj Tstg Limits 1 150 - 55~+150 Unit W °C °C ∗ Mounting density of other power ponents should be taken into consideration when laying out the pattern. !Marking (Voltage rank) Type No. PTZ3.6B PTZ3.9B PTZ4.3B PTZ4.7B PTZ5.1B PTZ5.6B PTZ6.2B PTZ6.8B PTZ7.5B (Ex.) PTZ3.6B Zener voltage category Year of manufacture: last digit of Western calendar Month of manufacture Ex.) PTZ3.6B 1999 Dec. Type No. 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 B B B B B B B B B PTZ8.2B PTZ9.1B PTZ10B PTZ11B PTZ12B PTZ13B PTZ15B PTZ16B PTZ18B 8.2 9.1 10 11 12 13 15 16 18 B B B B B B B B B Type No. PTZ20B PTZ22B PTZ24B PTZ27B PTZ30B PTZ33B PTZ36B - - 20 22 24 27 30 33 36 - - B B B B B B B 3.6B 9 C Month Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec. Symbol 1 2 3 4 5 6 7 8 9 O A C 5.0±0.3 PTZ Series Diodes !Electrical characteristics (Ta=25°C) Zener voltage subdivision Type Min. VZ (V) Max. IZ (m A) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Max. Operating resistance ZZ (Ω) IZ (m A) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Reverse current IR (µA) Max. 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 VR (V) PTZ 3.6B PTZ 3.9B PTZ 4.3B PTZ 4.7B PTZ 5.1B PTZ 5.6B PTZ 6.2B PTZ 6.8B PTZ 7.5B PTZ 8.2B PTZ 9.1B PTZ 10B PTZ 11B PTZ 12B PTZ 13B PTZ 15B PTZ 16B PTZ 18B PTZ 20B PTZ 22B PTZ 24B PTZ 27B PTZ 30B PTZ 33B PTZ...