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Rohm Semiconductor Electronic Components Datasheet

IMZ2A Datasheet

Dual Transistor

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EMZ2 / UMZ2N / IMZ2A
Power management (dual transistors)
Datasheet
<For Tr1(PNP)>
Parameter
VCEO
IC
 
<For Tr2(NPN)>
Parameter
VCEO
IC
Value
-50V
-150mA
 
Value
50V
150mA
lOutline
SOT-563
 
EMZ2
(EMT6)
SOT-457
 
IMZ2A
(SMT6)
SOT-363
 
UMZ2N
(UT6)
           
 
 
 
 
 
lFeatures
1) Included a 2SA1037AK and a 2SC2412K
   transistor in a EMT, UMT or SMT package.
2)Mounting possible with EMT3 or UMT3 or SMT3
  automatic mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
lInner circuit
EMZ2 / UMZ2N
IMZ2A
lApplication
GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
lPackaging specifications
   
   
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
EMZ2
SOT-563 1616 T2R 180
(EMT6)
8
8000
Z2
UMZ2N
SOT-363
(UT6)
2021
TR
180
8
3000
Z2
IMZ2A
SOT-457
(SMT6)
2928
T108
180
8
3000
Z2
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150825 - Rev.003


Rohm Semiconductor Electronic Components Datasheet

IMZ2A Datasheet

Dual Transistor

No Preview Available !

EMZ2 / UMZ2N / IMZ2A
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
EMZ2/ UMZ2N
IMZ2A
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1 *2
PD*1 *3
Tj
Tstg
Tr1(PNP) Tr2(NPN) Unit
-60 60 V
-50 50 V
-6 7 V
-150 150 mA
150 mW/Total
300 mW/Total
150
-55 to +150
lElectrical characteristics (Ta = 25°C) <For Tr1(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -60V
VEB = -6V
IC = -50mA, IB = -5mA
VCE = -6V, IC = -1mA
VCE = -12V, IE = 2mA,
f = 100MHz
VCB = -12V, IE = 0A,
f = 1MHz
Values
Min. Typ. Max.
-60 -
-
-50 -
-
-6 -
-
- - -100
- - -100
- - -500
120 - 560
Unit
V
V
V
nA
nA
mV
-
- 140 - MHz
- 4.0 5.0 pF
lElectrical characteristics (Ta = 25°C) <For Tr2(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 60V
VEB = 7V
IC = 50mA, IB = 5mA
VCE = 6V, IC = 1mA
VCE = 12V, IE = -2mA,
f = 100MHz
Output capacitance
Cob
VCB = 12V, IE = 0A,
f = 1MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
Values
Min. Typ. Max.
60 -
-
50 -
-
7- -
- - 100
- - 100
- - 400
120 - 560
Unit
V
V
V
nA
nA
mV
-
- 180 - MHz
- 2.0 3.5 pF
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150825 - Rev.003


Part Number IMZ2A
Description Dual Transistor
Maker Rohm
PDF Download

IMZ2A Datasheet PDF






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