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Rohm Semiconductor Electronic Components Datasheet

IMX1 Datasheet

Dual Transistor

No Preview Available !

EMX1 / UMX1N / IMX1
General purpose transistor (dual transistors)
Datasheet
Parameter
VCEO
IC
 
Tr1 and Tr2
50V
150mA
 
lFeatures
1) Two 2SC2412K chips in a EMT, UMT or
   SMT package.
2) Mounting possible with EMT3, UMT3 or SMT3
  automatic mounting machines.
3) Transistor elements are independent,
  eliminating interference.
4) Mounting cost and area can be cut in half.
lOutline
SOT-563
SOT-363
  
EMX1
(EMT6)
SOT-457
 
UMX1N
(UMT6)
             
 
 
 
IMX1
 
(SMT6)
 
              
lInner circuit
EMX1 / UMX1N
IMX1
lApplication
GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
lPackaging specifications
   
   
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
EMX1
SOT-563 1616 T2R 180
(EMT6)
8
8000
X1
UMX1N SOT-363 2021 TN 180
(UMT6)
8
3000
X1
IMX1
SOT-457
(SMT6)
2928
T110
180
8
3000
X1
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/8
20150825 - Rev.003


Rohm Semiconductor Electronic Components Datasheet

IMX1 Datasheet

Dual Transistor

No Preview Available !

EMX1 / UMX1N / IMX1
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
EMX1/ UMX1N
IMX1
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1 *2
PD*1 *3
Tj
Tstg
Values
60
50
7
150
150
300
150
-55 to +150
Unit
V
V
V
mA
mW/Total
mW/Total
lElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = 50μA
VCB = 60V
VEB = 7V
IC = 50mA, IB = 5mA
VCE = 6V, IC = 1mA
Transition frequency
fT
VCE = 12V, IE = -2mA,
f = 100MHz
Output capacitance
Cob
VCB = 12V, IE = 0A,
f = 1MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
Values
Min. Typ. Max.
60 -
-
Unit
V
50 - - V
7- -V
- - 100 nA
- - 100 nA
- - 400 mV
120 - 560 -
- 180 - MHz
- 2.0 3.5 pF
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/8
20150825 - Rev.003


Part Number IMX1
Description Dual Transistor
Maker Rohm
PDF Download

IMX1 Datasheet PDF






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