900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Rohm Semiconductor Electronic Components Datasheet

IMT18 Datasheet

General purpose transistors

No Preview Available !

www.DataSheet4U.com
Transistors
EMT18 / UMT18N / IMT18
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
zFeatures
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMT18 / UMT18N
(3) (2) (1)
IMT18
(4) (5) (6)
Tr1
Tr2 Tr2
Tr1
(4) (5) (6)
(3) (2) (1)
zExternal dimensions (Unit : mm)
EMT18
ROHM : EMT6
(4) (3)
(5) (2)
(6) (1)
1.2
1.6
Each lead has same dimensions
Abbreviated symbol : T18
UMT18N
1.25
2.1
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol : T18
IMT18
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
Abbreviated symbol : T18
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
EMT6
Power dissipation
PC UMT6
SMT6
Junction temperature
Tj
Storage temperature
Tstg
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
3 200mW per element must not be exceeded.
Limits
15
12
6
500
1.0
1
150 (TOTAL)2
300 (TOTAL)3
150
55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Rev.A
1/3


Rohm Semiconductor Electronic Components Datasheet

IMT18 Datasheet

General purpose transistors

No Preview Available !

Transistors
EMT18 / UMT18N / IMT18
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE= −10µA
Collector cutoff current
ICBO − − −0.1 µA VCB= −15V
Emitter cutoff current
IEBO − − −0.1 µA VCB= −6V
Collector-emitter saturation voltage VCE (sat) − −100 250 mV IC / IB= −200mA / 10mA
DC current transfer ratio
hFE 270 680 VCE= −2V, IC= −10mA
Transition frequency
fT 260 MHz VCE= −2V, IE=10mA, f=100MHz
Output capacitance
Cob 6.5 pF VCB= −10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
Taping
TR
3000
T110
3000
zElectrical characteristic curves
1000
500
VCE=2V
200 Ta=125°C
100 Ta=25°C
Ta= −40°C
50
20
10
5
2
1
0 0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
VCE=2V
200
100
Ta=125°C
Ta=25°C
50 Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC Current Gain vs.
Collector Current
1000
500
IC / IB=20
200
100 Ta=125°C
50 Ta=25°C
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
Rev.A
2/3


Part Number IMT18
Description General purpose transistors
Maker Rohm
PDF Download

IMT18 Datasheet PDF






Similar Datasheet

1 IMT17 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Diodes
2 IMT17 General purpose transistor isolated dual transistors
Rohm
3 IMT17 GENERAL PURPOSE DUAL TRANSISTOR
UTC
4 IMT18 General purpose transistors
Rohm
5 IMT1A General Purpose Transistor (Isolated Dual Transistors)
Rohm





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy