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Rohm Semiconductor Electronic Components Datasheet

IMN11 Datasheet

Switching diode

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Diodes
Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N
!Applications
Ultra high speed switching
!Features
1) A wide variety of configurations are available.
(UMD5, UMD6, SMD5, SMD6)
2) Multiple diodes in one small surface mount package.
3) Diode characteristics are matched in the package.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
FMN1 / FMP1
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
0.1
0.8±0.1
UMN1N / UMP1N
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.7
00.1
0.3
+0.1
0.05
0.15
+0.1
0.06
(All leads have the same dimensions.)
ROHM : SMD5
EIAJ : SC-74A
JEDEC :
Marking
FMN1 : N1
FMP1 : P1
IMN10 / IMN11 / IMP11
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
0.1
0.8±0.1
00.1
0.2
+0.1
0.05
0.15±0.05
(All leads have the same dimensions.)
ROHM : UMD5
EIAJ : SC-88A
JEDEC : SOT-353
UMN11N / UMP11N
Marking
UMN1N : N1
UMP1N : P1
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.7
00.1
0.3
+0.1
0.05
0.15
+0.1
0.06
(All leads have the same dimensions.)
ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457
Marking
IMN10 : N10
IMN11 : N11
IMP11 : P11
00.1
0.2
+0.1
0.05
0.15±0.05
(All leads have the same dimensions.)
ROHM : UMD6
EIAJ : SC-88
JEDEC : SOT-363
Marking
UMN11N : N11
UMP11N : P11
!Circuit
FMN1
FMP1
IMN10
SMD5 / SMD6 Package
IMN11
IMP11
UMN1N
UMP1N
UMD5 / UMD6 Package
UMN11N
UMP11N


Rohm Semiconductor Electronic Components Datasheet

IMN11 Datasheet

Switching diode

No Preview Available !

Diodes
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
!Absolute maximum ratings (Ta=25°C)
Type
FMN1
UMN1N
Peak
reverse
voltage
VRM (V)
80
DC
reverse
voltage
VR (V)
80
Peak
forward
current
IFM (mA)
Mean
rectifying
current
IO (mA)
80 25
FMP1
UMP1N
80
80
80
25
IMN10
80
80 300 100
IMN11
UMN11N
80
80 300 100
IMP11
UMP11N
80
80
1 Not to exceed 200mW per element.
2 Not to exceed 120mW per element.
300 100
Surge
current
(1µs)
Isurge (A)
Power
dissipation
(TOTAL)
Pd (mW)
Junction
temperature
Tj (˚C)
Storage
temperature
Tstg (˚C)
0.25 150/80 150 55∼+150
0.25
4
4
150/80
300 1
150 2
150
150
150
55∼+150
55∼+150
55∼+150
4
150 2
150
55∼+150
!Electrical characteristics (Ta=25°C)
Forward voltage Reverse current Capacitance between terminals
Type
VF (V)
Max.
Cond.
IF (mA)
IR (µA)
Max.
Cond.
VR (V)
CT (pF)
Max.
Cond.
VR (V) f (MHz)
FMN1
UMN1N
0.9 5 0.1 70 3.5 6
1
FMP1
UMP1N
0.9 5 0.1 70 3.5 6
1
IMN10
1.2 100 0.1 70 3.5
6
1
IMN11
UMN11N
1.2 100 0.1
70
3.5
6
1
IMP11
UMP11N
1.2 100 0.1
70
3.5
6
1
Reverse recovery time
trr (ns)
Max.
Cond.
VR (V)
IF (mA)
465
465
465
465
465
!Electrical characteristic curves (Ta=25°C)
125 50
100
75
50
25
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (˚C)
Fig.1 Power reduction curve
20
10
5
2
1
0.5 Ta=25˚C
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : VF (V)
Fig. 2 Forward current vs.
forward voltage
(P Type)
1 000
100
10
1.0
0.1
Ta=100˚C
75˚C
50˚C
25˚C
0˚C
25˚C
0.01
0
10 20 30 40
50
REVERSE VOLTAGE : VR (V)
Fig.3 Reverse current vs.
reverse voltage
(P Type)


Part Number IMN11
Description Switching diode
Maker Rohm
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IMN11 Datasheet PDF






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