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Rohm Semiconductor Electronic Components Datasheet

IMH11A Datasheet

NPN Digital Transistor

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EMH11 / UMH11N / IMH11A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
50V
100mA
10k
10k
Features
1) Built-In Biasing Resistors, R1 = R2 = 10k.
2) Two DTC114E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
Outline
EMT6
(6)
(5)
(1) (4)
(2)
(3)
EMH11
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMH11A
SOT-457 (SC-74)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMH11N
SOT-363 (SC-88)
Inner circuit
EMH11 / UMH11N
OUT
(6)
IN
(5)
GND
(4)
IMH11A
OUT
(4)
IN
(5)
GND
(6)
Application
Inverter circuit, Interface circuit, Driver circuit
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
Packaging specifications
Part No.
Package
EMH11
UMH11N
IMH11A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TN
T110
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
H11
H11
H11
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/7
2014.09 - Rev.C


Rohm Semiconductor Electronic Components Datasheet

IMH11A Datasheet

NPN Digital Transistor

No Preview Available !

EMH11 / UMH11N / IMH11A
Absolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMH11 / UMH11N
IMH11A
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
50
10 to 40
50
100
150 (Total)*3
300 (Total)*4
150
55 to 150
Unit
V
V
mA
mA
mW
mW
°C
°C
Electrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
Conditions
VCC = 5V, IO = 100A
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min. Typ. Max. Unit
- - 0.5
V
3.0 -
-
- 0.1 0.3 V
- - 0.88 mA
- - 0.5 A
30 - - -
7 10 13 k
0.8 1 1.2 -
- 250 - MHz
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/7
2014.09 - Rev.C


Part Number IMH11A
Description NPN Digital Transistor
Maker Rohm
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IMH11A Datasheet PDF






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