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Rohm Semiconductor Electronic Components Datasheet

IMD9A Datasheet

Digital Transistor

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EMD9 / UMD9N / IMD9A
General purpose (dual digital transistor)
Datasheet
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
10kΩ
47kΩ
<For DTr2(PNP)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-100mA
10kΩ
47kΩ
lFeatures
1)DTA114Y and DTC114Y transistor are
  built-in a EMT or UMT or SMT package.
2)Mounting possible with EMT3 or UMT3
  or SMT3 automatic mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline
SOT-563
SOT-363
  
EMD9
(EMT6)
SOT-457
UMD9N
(UMT6)
           
 
 
  
IMD9A
(SMT6)
 
 
              
lInner circuit
EMD9 / UMD9N
IMD9A
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
   
   
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
EMD9
SOT-563
(EMT6)
1616
T2R
180
8
8000
D9
UMD9N
SOT-363 2021
TR
180
8
(UMT6)
3000
D9
IMD9A
SOT-457
(SMT6)
2928
T108
180
8
3000
D9
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/9
20151020 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

IMD9A Datasheet

Digital Transistor

No Preview Available !

EMD9 / UMD9N / IMD9A
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMD9/ UMD9N
IMD9A
Junction temperature
Range of storage temperature
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC 50
-50 V
VIN -6 to 40 -40 to 6 V
IO
IC(MAX)*1
PD*2*3
PD*2*4
Tj
Tstg
70 -70
100 -100
150
300
150
-55 to +150
mA
mA
mW/Total
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 1mA
IO = 5mA, II = 0.25mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Min. Typ. Max.
- - 0.3
1.4 -
-
- 100 300
- - 880
- - 500
68 -
-
7 10 13
3.7 4.7 5.7
Unit
V
mV
μA
nA
-
-
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -1mA
IO = -5mA, II = -0.25mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA
-
-
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/9
Values
Min. Typ. Max.
- - -0.3
-1.4 -
-
- -100 -300
- - -880
- - -500
68 -
-
7 10 13
3.7 4.7 5.7
Unit
V
mV
μA
nA
-
-
- 250 - MHz
20151020 - Rev.002


Part Number IMD9A
Description Digital Transistor
Maker Rohm
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IMD9A Datasheet PDF






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