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Rohm Semiconductor Electronic Components Datasheet

IMD16A Datasheet

Power management

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Power management (dual digital transistors)
IMD16A
zFeatures
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low VCE(sat) of drive transistors for low power dissipation.
zPackage, marking, and packaging specifications
Part No.
IMD16A
Package
SMT6
Marking
D16
Code
Basic ordering unit (pieces)
T108
3000
zDimensions (Unit : mm)
(4) (5) (6)
(3) (2) (1)
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
DTr1 (PNP)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IC
DTr2 (NPN)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
50
12
5
500
Limits
50
50
5
100
Unit
V
V
mA
Unit
V
V
V
mA
zInner circuit
(4) (5)
(6)
R2=22k
R1=2.2k
DTr2
DTr1
R1=100k
(3) (2) (1)
Total
Parameter
Collector power dissipation
Symbol
Pd
Junction temperature
Tj
Storage temperature
Tstg
200mW per element must not be exceeded.
Limits
300(TOTAL)
150
55 to +150
Unit
mW
°C
°C
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.06 - Rev.E


Rohm Semiconductor Electronic Components Datasheet

IMD16A Datasheet

Power management

No Preview Available !

IMD16A
zElectrical characteristics (Ta=25°C)
DTr1
Parameter
Symbol Min. Typ. Max.
Input voltage
VI(off)
VI(on)
2
− −0.3
−−
Output voltage
VO(on)
− −0.3
Input current
II − − −3
Output current
DC current gain
Transition frequency
IO(off)
GI 1
fT 2
82
− −0.5
−−
250
Input resistance
R1 1.54 2.2 2.86
Resistance ratio
R2 / R1
8
10 12
∗ ∗1 Measured using pulse current. 2 Transition frequency of mounted transistor.
Unit
V
V
mA
µA
MHz
k
Conditions
VCC= −5V , IO= −100µA
VO= −0.3V , IO= −20mA
IO/II= −50mA / 2.5mA
VI= −5V
VCC= −50V , VI=0V
IO= −50mA , VO= −5V
VCE= −10V , IE=50mA , f=100MHz
DTr2
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
Transition frequency
hFE
fT
Input resistance
R1
Transition frequency of mounted transistor.
Min.
50
50
5
100
70
Typ.
250
250
100
Max.
0.5
0.5
0.3
600
130
Unit
V
V
V
µA
µA
V
MHz
k
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=1mA/0.1mA
VCE=5V , IC=1mA
VCE=10V , IE=−5mA , f=100MHz
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.06 - Rev.E


Part Number IMD16A
Description Power management
Maker Rohm
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