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Rohm Semiconductor Electronic Components Datasheet

IMB3A Datasheet

Dual Digital Transistor

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Transistors
EMB3 / UMB3N / IMB3A
General purpose (dual digital transistors)
EMB3 / UMB3N / IMB3A
!Features
1) Two DTA143T chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
!Structure
Dual PNP digital transistor
(each with single built in resistor)
The following characteristics apply to both DTr1 and DTr2.
!External dimensions (Units : mm)
EMB3, UMB3N
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol: B3
IMB3A
!Equivalent circuit
EMB3, UMB3N
(3) (2) (1)
R1
DTr2
DTr1
R1
(4) (5) (6)
R1=4.7k
IMB3A
(4) (5) (6)
R1
DTr2
DTr1
R1
(3) (2) (1)
R1=4.7k
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol: B3
!Packaging specifications
Type
EMB3
UMB3N
IMB3N
Package
Code
Basic ordering unit (pieces)
T2R
8000
Taping
TN
3000
T110
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Collector power EMB3,UMB3N
dissipation
IMB3A
IC
PC
Junction temperature
Tj
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Tstg
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
55~+150
Unit
V
V
V
mA
1
mW
2
°C
°C


Rohm Semiconductor Electronic Components Datasheet

IMB3A Datasheet

Dual Digital Transistor

No Preview Available !

Transistors
EMB3 / UMB3N / IMB3A
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Transition frequency of the device
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
R1
Min.
50
50
5
100
3.29
Typ.
250
250
4.7
Max.
0.5
0.5
0.3
600
6.11
Unit
V
V
V
µA
µA
V
MHz
k
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/2.5mA
VCE=5V, IC=1mA
VCE=10mA, IE=5mA, f=100MHz
!Electrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100°C
25°C
50 40°C
20
10
5
2
1
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
500m
200m
100m
50m
Ta=100°C
25°C
40°C
lC/lB=20
20m
10m
5m
2m
1m
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current


Part Number IMB3A
Description Dual Digital Transistor
Maker Rohm
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IMB3A Datasheet PDF






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