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Rohm Semiconductor Electronic Components Datasheet

IMB10A Datasheet

Dual Digital Transistor

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Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
EMB10 / UMB10N / IMB10A
zFeatures
1) Two DTA123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr1 and
DTr2.
zEquivalent circuit
EMB10 / UMB10N
(3) (2) (1)
R1 R2
R1=2.2kDTr2
DTr1
R2=47k
R2 R1
(4) (5) (6)
IMB10A
(4) (5) (6)
R1 R2
DTr2
DTr1
R1=2.2k
R2 R1
R2=47k
(3) (2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Supply voltage
VCC 50
Input voltage
12
VIN
5
Output current
IO
IC (Max.)
100
100
Power EMB10, UMB10N
dissipation IMB10A
Pd
150 (TOTAL)
300 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55 to +150
Unit
V
V
mA
1
mW
2
˚C
˚C
zExternal dimensions (Unit : mm)
EMB10
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : B10
UMB10N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88 Abbreviated symbol : B10
IMB10A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74 Abbreviated symbol : B10
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

IMB10A Datasheet

Dual Digital Transistor

No Preview Available !

Transistors
EMB10 / UMB10N / IMB10A
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI (off)
VI (on)
1.1
Output voltage
VO (on) − −0.1
Input current
II − −
Output current
IO (off)
DC current gain
Transition frequency
GI 80
fT 250
Input resistance
R1
Resistance ratio
R2 / R1
Transition frequency of the device
1.54
17
2.2
21
Max.
0.5
0.3
3.6
0.5
2.86
26
Unit
V
V
mA
µA
MHz
k
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=5mA
IO/II=5mA/0.25mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=10mA
VCE=10V, IE=5mA, f=100MHz
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMB10
UMB10N
IMB10A
T2R
8000
Taping
TN
3000
T148
3000
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta=40˚C
25˚C
100˚C
200m
100m
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
200m
100m
50m
Ta=100˚C
25˚C
40˚C
lO/lI =20
20m
10m
5m
-2m
1m
100µ −200µ −500µ −1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
VCC=5V
Ta=100˚C
25˚C
40˚C
0.5 1 1.5 2 2.5
INPUT VOLTAGE : VI (off) (V)
3
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100˚C
200
25˚C
40˚C
100
50
20
10
5
VO=5V
2
1
100µ −200µ −500µ −1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
Rev.A
2/2


Part Number IMB10A
Description Dual Digital Transistor
Maker Rohm
PDF Download

IMB10A Datasheet PDF






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