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Rohm Semiconductor Electronic Components Datasheet

FMY4A Datasheet

Dual Transistor

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Transistors
FMY4A
Power management (dual transistors)
FMY4A
zFeature
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
zExternal dimensions (Unit : mm)
FMY4A
SOT-25
zEquivalent circuits
FMY4A
(3) (4)
(5)
Tr1
Tr2
(2) (1)
1.6
2.8
ROHM : SMT5
EIAJ : SC-74A
0.3to0.6
Each lead has same dimensions
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
1 200mW per element must not be exceeded.
Limits
Tr1 Tr2
60 60
50 50
6 7
150 150
300 (TOTAL)
150
55 to +150
Unit
V
V
V
mA
mW 1
°C
°C
zPackage, marking, and packaging specifications
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
FMY4A
SMT5
Y4
T148
3000
Rev.A
1/4


Rohm Semiconductor Electronic Components Datasheet

FMY4A Datasheet

Dual Transistor

No Preview Available !

Transistors
FMY4A
zElectrical characteristics (Ta=25°C)
Tr1 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Tr2 (NPN)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
6
120
Typ.
140
4
Max.
0.1
0.1
0.5
560
5
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 60V
VEB = 6V
IC/IB = 50mA/5mA
VCE = 6V , IC = 1mA
VCE = 12V , IE = 2mA , f = 100MHz
VCB = 12V , IE = 0A , f = 1MHz
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
0.4
560
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 60V
VEB = 7V
IC/IB = 50mA/5mA
VCE = 6V , IC = 1mA
VCE = 12V , IE = 2mA , f = 100MHz
VCB = 12V , IE = 0A , f = 1MHz
zElectrical characteristics curves
PNP Tr
50
Ta=100˚C
20 25˚C
40˚C
10
5
VCE= 6V
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (Ι)
100
Ta=25˚C
500
80 450
400
350
300
60
40
20
250
200
150
100
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (ΙΙ)
Rev.A
2/4


Part Number FMY4A
Description Dual Transistor
Maker Rohm
PDF Download

FMY4A Datasheet PDF






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