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Rohm Semiconductor Electronic Components Datasheet

FMY1A Datasheet

Dual Transistor

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Transistors
EMY1 / UMY1N / FMY1A
Emitter common (dual transistors)
EMY1 / UMY1N / FMY1A
!Features
1) Includes a 2SA1037AK and a 2SC2412K transistor in
a EMT or UMT or SMT package.
2) PNP and NPN transistors have common emitters.
3) Mounting cost and area can be cut in half.
!Structure
Epitaxial planar type
PNP / NPN silicon transistor
!Equivalent circuit
EMY1 / UMY1N
(3) (2) (1)
Tr2 Tr1
(4) (5)/(6)
FMY1A
(3) (4)
Tr2
(5)
R1
Tr1
(2) (1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Symbol
VCBO
Limits
Tr1 Tr2
60 60
Collector-emitter voltage
VCEO 50 50
Emitter-base voltage
Collector current
Power
EMY1, UMY1N
dissipation FMY1A
VEBO
IC
PC
6 7
150 150
150 (TOTAL)1
300 (TOTAL)2
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55∼+150
Unit
V
V
V
mA
mW
°C
°C
!External dimensions (Units : mm)
EMY1
(4) (3)
(2)
(5) (1)
1.2
1.6
ROHM : EMT5
Each lead has same dimensions
Abbreviated symbol : Y1
UMY1N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : Y1
FMY1A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : Y1


Rohm Semiconductor Electronic Components Datasheet

FMY1A Datasheet

Dual Transistor

No Preview Available !

Transistors
EMY1 / UMY1N / FMY1A
!Electrical characteristics (Ta = 25°C)
Tr1 (PNP)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE=50µA
Collector cutoff current
ICBO − − −0.1 µA VCB=60V
Emitter cutoff current
IEBO − − −0.1 µA VEB=6V
Collector-emitter saturation voltage VCE (sat) − − −0.5 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 120 560 VCE=6V, IC=1mA
Transition frequency
Output capacitance
fT 140 MHz VCE=12V, IE=2mA, f=100MHz
Cob 4 5 PF VCB=12V, IE=0A, f=1MHz
Tr2 (NPN)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 7 − − V IE=50µA
Collector cutoff current
ICBO − − 0.1 µA VCB=60V
Emitter cutoff current
IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 120 560 VCE=6V, IC=1mA
Transition frequency
Output capacitance
fT 180 MHz VCE=12V, IE=2mA, f=100MHz
Cob 2 3.5 PF VCB=12V, IE=0A, f=1MHz
!Packaging specifications
Packaging type
Code
Type
Basic ordering
unit (pieces)
EMY1
UMY1N
FMY1
T2R
8000
Taping
TR
T148
3000
3000
!Electrical characteristic curves
Tr1 (PNP)
50
Ta=100˚C
20 25˚C
40˚C
10
VCE=6V
5
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
100
Ta=25˚C
500
80 450
400
350
300
60
250
200
40 150
100
20
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )


Part Number FMY1A
Description Dual Transistor
Maker Rohm
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FMY1A Datasheet PDF






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