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Rohm Semiconductor Electronic Components Datasheet

FMG4A Datasheet

Emitter common (dual digital transistor)

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EMG4 / UMG4N / FMG4A
Emitter common(dual digital transistor)
Datasheet
Parameter
VCEO
IC
R1
 
DTr1 and DTr2
50V
100mA
10kΩ
 
lFeatures
1)Two DTC114T chips in a EMT or UMT or
  SMT package.
2)Mounting cost and area can be cut in half.
lOutline
SOT-553
SOT-353
  
EMG4
UMG4N
(EMT5)
(UMT5)
SOT-25
           
 
 
  
FMG4A
(SMT5)
 
 
              
lInner circuit
EMG4 / UMG4N
FMG4A
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
   
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
   
Marking
EMG4
SOT-553 1616 T2R 180
(EMT5)
8
8000
G4
UMG4N
SOT-353 2021
TR
180
8
(UMT5)
3000
G4
FMG4A
SOT-25
(SMT5)
2928
T148
180
8
3000
G4
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/6
20151019 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

FMG4A Datasheet

Emitter common (dual digital transistor)

No Preview Available !

EMG4 / UMG4N / FMG4A
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMG4
Power dissipation
UMG4N
FMG4A
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1*2
PD*1*2
PD*1*3
Tj
Tstg
Values
50
50
5
100
150
150
300
150
-55 to +150
Unit
V
V
V
mA
mW/Total
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC = 10mA, IB = 1mA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*4
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.
Values
Unit
Min. Typ. Max.
50 - - V
50 - - V
5- -V
- - 500 nA
- - 500 nA
- - 300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20151019 - Rev.002


Part Number FMG4A
Description Emitter common (dual digital transistor)
Maker Rohm
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FMG4A Datasheet PDF






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Rohm





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