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Rohm Semiconductor Electronic Components Datasheet

FMG3A Datasheet

Emitter common (dual digital transistors)

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Transistors
Emitter common
(dual digital transistors)
EMG3 / UMG3N / FMG3A
EMG3 / UMG3N / FMG3A
zFeatures
1) Two DTC143T chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Dual NPN digital transistor
(each with a single built in resistors)
The following characteristics apply to both the DTr1 and
DTr2.
zExternal dimensions (Unit : mm)
EMG3
(4) (3)
(2)
(5) (1)
1.2
1.6
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G3
UMG3N
zEquivalent circuit
EMG3 / UMG3N
FMG3A
(3) (2) (1) R1=4.7k
(3) (4)
R1 R1
R1
DTr2
DTr1
DTr2
(5) R1=4.7k
R1
DTr1
(4) (5)
(2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector current
IC 100
Collector EMG3, UMG3N
150 (TOTAL)
power
PC
dissipation FMG3A
300 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55 to +150
Unit
V
V
V
mA
1
mW
2
˚C
˚C
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G3
FMG3A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G3
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

FMG3A Datasheet

Emitter common (dual digital transistors)

No Preview Available !

Transistors
EMG3 / UMG3N / FMG3A
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO 50 − − V
Collector-emitter breakdown voltage BVCEO 50 − − V
Emitter-base breakdown voltage
BVEBO 5 − − V
Collector cutoff current
ICBO − − 0.5 µA
Emitter cutoff current
IEBO − − 0.5 µA
Collector-emitter saturation voltage VCE (sat) − − 0.3 V
DC current transfer ratio
hFE 100 250 600
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.25mA
VCE=5V, IC=1mA
Transition frequency
Input resistance
Transition frequency of the transistor
fT 250 MHz VCE=10V, IE= 5mA, f=100MHz
R1 3.29 4.7 6.11 k
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMG3
UMG3N
FMG3A
T2R
8000
Taping
TR
T148
3000
3000
zElectrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100˚C
25˚C
50 40˚C
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
500m
lC/lB=20
200m
100m
50m
Ta=100˚C
25˚C
40˚C
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/2


Part Number FMG3A
Description Emitter common (dual digital transistors)
Maker Rohm
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FMG3A Datasheet PDF






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