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D1768S - 2SD1768S

Features

  • 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+.
  • 0.1 1.6±0.1 0.2 1.5 +.
  • 0.1 4.0±0.3 2.5+0.2.
  • 0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4 +.
  • 0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN sil icon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : D F (1) Base (2) Collector (.

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Datasheet Details

Part number D1768S
Manufacturer ROHM
File Size 169.42 KB
Description 2SD1768S
Datasheet download datasheet D1768S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 4.0±0.3 2.5+0.2 −0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4 + −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN sil icon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : D F (1) Base (2) Collector (3) Emitter 2SD1733 1.5±0.3 2SD1768S 4±0.2 2±0.2 3±0.2 0.3 5.5+ −0.1 9.5±0.5 (15Min.) 0.9 1.5 0.75 0.9 0.65±0.1 2.5 0.15 0.45+ −0.05 3Min. 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.
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