CDZ3.6B
Key Features
- 9±0.05
- 0±0.05 ① ② VMN2
- 156 0.35±0.1 0.37±0.03 zStructure zConstruction Silicon epitaxial planar ROHM : VMN2 ① ② dot (year week factory) + day EX. CDZ3.6B zTaping specifications (Unit : mm) 4±0.1 2±0.05 φ1.55 0.2±0.05
- 5±0.05
- 75±0.1
- 1±0.05 φ0.5 0.7±0.05 2±0.05 4.0±0.1 0.52 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg Operating temperature Topr Limits 100 150 -55 to +150 -55 to +150 Unit mW ℃ ℃ ℃
- 0±0.2
- 5 1/4 CDZ3.6B Diodes zElectrical characteristics (Ta=25°C) Symbol TYP. CDZ 3.6B CDZ 3.9B CDZ 4.3B CDZ 4.7B CDZ 5.1B CDZ 5.6B CDZ 6.2B CDZ 6.8B CDZ 7.5B CDZ 8.2B CDZ 9.1B CDZ 10B CDZ 11B CDZ 12B CDZ 13B CDZ 15B CDZ 16B Zener voltage ：Vz(V) Operating resistance ：Zz(Ω) Rising operating resistance：Zz(Ω) Reverse current ： IR(uA) MIN. 3.600 3.890 4.170 4.550 4.980 5.490 6.060 6.650 7.280 8.020 8.850 9.770 10.760 11.740 12.910 14.340 15.850 MAX. 3.845 4.160 4.430 4.750 5.200 5.730 6.330 6.930 7.600 8.360 9.230 10.210 11.220 12.240 13.490 14.980 16.510 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAX. 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAX. 1000.0 1000.0 1000.0 800.0 500.0 200.0 100.0 60.0 60.0 60.0 60.0 60.0 60.0 80.0 80.0 80.0 80.0 Iz(mA) 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 MAX. 10.0 5.0 5.0 2.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8
