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Rohm Semiconductor Electronic Components Datasheet

C5868 Datasheet

2SC5868

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Medium power transistor (60V, 0.5A)
2SC5868
Features
1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 75mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load
and capacitance load.
4) Complements the 2SA2090
Applications
Small signal low frequency amplifier
High speed switching
Dimensions (Unit : mm)
TSMT3
2.8
1.6
(1) Base
(2) Emitter
(3) Collector
0.3 0.6 Each lead has same dimensions
Abbreviated symbol : VS
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Type
2SC5868
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
1 Pw=10ms
2 Each terminal mounted on a recommended land
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
60
60
6
0.5
1.0
500
150
55 to 150
Unit
V
V
V
A
A
mW
1
2
°C
°C
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

C5868 Datasheet

2SC5868

No Preview Available !

2SC5868
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time
Storage time
Ton
Tstg
Fall time
Tf
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
Min.
60
60
6
120
Typ.
75
300
5
70
130
80
Max.
1.0
1.0
300
390
Unit
V
V
V
μA
μA
mV
MHz
pF
ns
ns
ns
Condition
IC=1mA
IC=100μA
IE=100μA
VCB=40V
VEB=4V
IC=100mA
IB=10mA
VCE=2V
IC=50mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=500mA
IB1=50mA
IB2= −50mA
VCC 25V
1
1
2
hFE RANK
Q
120270
R
180390
Data Sheet
Electrical characteristic curves
1000
Ta=25°C
VCC=25V
IC / IB=10 / 1
Tstg
100 Tf
Ton
10
0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1000
100
10
Ta=25°C
VCE=5V
VCE=3V
VCE=2V
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
IC / IB=10 / 1
0.01
0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
10
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
Ta=25°C
0.01
0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
10
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
0.1 Ta= −40°C
0.01
0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.A


Part Number C5868
Description 2SC5868
Maker Rohm
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C5868 Datasheet PDF






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