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Rohm Semiconductor Electronic Components Datasheet

C5824 Datasheet

2SC5824

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Transistor
Power transistor (60V, 3A)
2SC5824
2SC5824
!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
!External dimensions (Units : mm)
MPT3
4.0
1.0 2.5
(1)
0.5
(2)
(3)
!Applications
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(Sourse) Abbreviated symbol : UP
!Structure
Low frequency amplifier
High speed switching
!Packaging specifications
Type
2SC5824
Package
Code
Basic ordering unit
(pieces)
Taping
T100
1000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
PC
Junction temperature
Tj
Range of storage temperature
Tstg
1 Pw=100ms
2 Each terminal mounted on a recommended land.
3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits
60
60
6
3
6
500
2.0
150
55~+150
Unit
V
V
V
A
A 1
mW 2
W 3
°C
°C
1/3


Rohm Semiconductor Electronic Components Datasheet

C5824 Datasheet

2SC5824

No Preview Available !

Transistor
2SC5824
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collectorbase breakdown voltage BVCBO
Collectoremitter breakdown voltage BVCEO
Emitterbase breakdown voltage BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collectoremitter staturation voltage VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Turn-on time
Cob
Ton
Storage time
Tstg
Fall time
Tf
1 Non repetitive pulse
2 See switching charactaristics measurement circuits
Min.
60
60
6
120
Typ.
200
200
20
50
150
30
Max.
1.0
1.0
500
390
Unit Conditions
V IC=100µA
V IC=1mA
V IE=100µA
µA VCB=40V
µA
mV
MHz
pF
VEB=4V
IC=2A, IB=200mA 1
VCE=2V, IC=100mA
VCE=10V, IE= −100mA, f=10MHz 1
VCB=10V, IE=0mA, f=1MHz
ns IC=3A,
ns IB1=300mA
IB2= −300mA
ns VCC 25V 2
!hFE RANK
Q
120-270
R
180-390
!Electrical characteristic curves
10
100ms
1ms
1
10ms
DC
0.1
Single non repoetitive pulse
0.01
0.1
1 10 100
COLLECTOR EMITTER VOLTAGE : VCE (V)
Fig.1 Safe operating area
1000
Ta=25°C
VCE=5V
100 VCE=3V
1000
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
100
Ton
Tf
10
0.01
0.1 1
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
10
IC/IB=10/1
Ta=125°C
1
Ta=100°C
1000
100 Ta= −40°C
10
VCE=2V
Ta=25°C
Ta=100°C
Ta=125°C
1
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
1
10
VCE=2V
0.1
Ta=25°C
Ta= −40°C
0.1 IC/IB=20/1
IC/IB=10/1
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
0.01
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. Collector Current
vs. collector current
2/3


Part Number C5824
Description 2SC5824
Maker Rohm
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C5824 Datasheet PDF






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