C5824 2sc5824 equivalent, 2sc5824.
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA) 3) Strong discharge power for inductive .
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(S.
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