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Rohm Semiconductor Electronic Components Datasheet

C2062S Datasheet

2SC2062S

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Transistors
2SC2062S
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S
zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.)
2) High input impedance.
zAbsolute maximum ratings (Ta=25°C)
C
B
zExternal dimensions (Unit : mm)
SPT
4.0 2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
E : Emitter
C : Collector
B : Base
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCES
40
32
Emitter-base voltage
Collector current
Collector power dissipation
VEBO
IC
PC
12
0.3
0.3
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCES
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Output capacitance
Transition frequency of the device.
Cob
Min.
40
32
12
10000
Typ.
200
2.5
Max.
0.1
0.1
1.4
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=100µA
IC=10mA
IE=100µA
VCB=30V
VEB=12V
VCE/IC=3V/0.1A
IC/IB=200mA/0.2mA
VCE=5V , IE= −10mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SC2062S
Package
hFE
SPT
C
Code
Basic ordering unit (pieces)
TP
5000
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

C2062S Datasheet

2SC2062S

No Preview Available !

www.DataSheet4U.com
Transistors
zElectrical characteristics curves
500 Ta=25°C
18 20
16
400
14
12
300 10
8.0
200
6.0
4.0
100
2.0
0 IB=0µA
0 1.0 2.0
COLLECTOR - EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics ( Ι )
100 Ta=25°C 2.4
80
2.0
1.8
60 1.6
1.2
40
0.8
20 0.4
0.2
0 IB=0µA
0 1.0 2.0 3.0 4.0 5.0
COLLECTOR - EMITTER VOLTAGE : VCE (V)
Fig.2 Typical output characteristics ( ΙΙ )
2SA1759
2.2 Ta=25°C
2.0 VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0 2.0 5.0 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Base emitter 'ON' voltage
vs. collector current
100k
Ta=25°C
100k Ta=25°C
50k 50k VCE=5V
VCE=10V
Ta=25°C
20k 5V 20k
3V
10k 10k Ta=55°C
5k 5k
2k 2k
1k
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
1k
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ )
1.8 Ta=25°C
1.6 IC/IB=1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0 2.0 5.0 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector emitter saturation voltage
vs. collector current
2.2 Ta=25°C
IC/IB=1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Base emitter saturation voltage
vs. collector current
1000 Ta=25°C
500 VCE=5V
200
100
50
20
10
1.0 2.0 5.0 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Current gain-bandwidth product
vs. collector current
100 Ta=25°C
50 f=1MHz
20
10 Cib
5 Cob
2
1
0.5 1
2
5 10 20
REVERSE BIAS VOLTAGE (V)
50
Fig.9 Capacitance vs. reverse bias voltage
Rev.A
2/2


Part Number C2062S
Description 2SC2062S
Maker Rohm
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C2062S Datasheet PDF






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