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C2062S - 2SC2062S

Key Features

  • 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min. ) at VCE = 3V, IC = 0.1A. ) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min. ) 3.0 3Min. (1)Emitter (2)Collector (3)Base 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 Taping specifications E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 40 32 Emitter.

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Datasheet Details

Part number C2062S
Manufacturer ROHM
File Size 87.81 KB
Description 2SC2062S
Datasheet download datasheet C2062S Datasheet

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www.DataSheet4U.com Transistors 2SC2062S High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2)Collector (3)Base 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 Taping specifications E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 40 32 Emitter-base voltage Collector current Collector power dissipation VEBO IC PC 12 0.3 0.