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Rohm Semiconductor Electronic Components Datasheet

BR25S640-W Datasheet

SPI BUS

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High Reliability Series Serial EEPROMs
SPI BUS
BR25□□□□family
BR25S□□□ Series
No.10001EBT08
□□□Description
BR25S
series is a serial EEPROM of SPI BUS interface method.
Features
1) High speed clock action up to 20MHz (Max.)
2) Wait function by HOLDB terminal
3) Part or whole of memory arrays settable as read only memory area by program
4) 1.75.5V single power source action most suitable for battery use
5) Page write mode useful for initial value write at factory shipment
6) Highly reliable connection by Au pad and Au wire
7) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
8) Auto erase and auto end function at data rewrite
9) Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
10) Address auto increment function at read action
11) Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
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Write prohibition by WPB pin
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
12) SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J/VSON008X2030 Package
13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
14) Data kept for 40 years
15) Data rewrite up to 1,000,000 times
Page Write
Page
Part Number
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
BR25S□□□ series
Capacity
Bit format
Power source
voltage
32Kbit 4K×8 1.7V5.5V
64Kbit 8K×8 1.7V5.5V
128Kbit 16K×8 1.7V5.5V
256Kbit 32K×8 1.7V5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
● ●● ●
● ●● ●
●●
VSON008
X2030
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/18
2010.12 - Rev.B
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

BR25S640-W Datasheet

SPI BUS

No Preview Available !

BR25S□□□ Series
Technical Note
Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Limits
Unit
Impressed
voltage
Vcc -0.3+6.5
450(SOP8)
*1
V
450(SOP-J8)
*2
Permissible
dissipation
300(SSOP-B8)
Pd 330(TSSOP-B8)
310(MSOP8)
*3
*4 mW
*5
310(TSSOP-B8J)
*6
300(VSON008X2030) *7
Storage
temperature
range
Operating
temperature
range
Tstg
Topr
-65+125
-40+85
Terminal
voltage
-0.3Vcc+0.3
V
* When using at Ta=25or higher, 4.5mW(*1, *2),
3.0mW(*3, *7),3.3mW(*4), 3.1mW(*5, *6) to be reduced per 1
Memory cell characteristics (Ta=25°C , Vcc=1.7V5.5V)
Parameter
Limits
Min. Min. Min.
Number of
data rewrite times *1
1,000,000
Data hold years *1
40
*1 Not 100% TESTED
Recommended action conditions
Parameter
Symbol
Power source voltage
Input voltage
VCC
VIN
Limits
1.75.5
0Vcc
Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter Symbol Conditions
Input capacity *1
Output capacity *1
CIN
COUT
VIN=GND
VOUT=GND
*1 Not 100% TESTED.
Min.
Max.
8
8
Unit
Time
Year
Unit
V
Unit
pF
Electrical characteristics (Unless otherwise specified, Ta=-40+85°C, Vcc=1.75.5V)
Parameter
Symbol Min.
Limits
Typ.
Max. Unit
“H” Input Voltage1
VIH1 0.7xVcc Vcc+0.3 V 1.7Vcc5.5V
Conditions
“L” Input Voltage1
VIL1
-0.3
0.3xVcc V 1.7Vcc5.5V
“L” Output Voltage1
VOL1
0
0.4 V IOL=2.1mA, 2.5Vcc<5.5V
“L” Output Voltage2
“H” Output Voltage1
VOL2
0
VOH1 Vcc-0.2
0.2
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Vcc
V IOL=1.0mA, 1.7Vcc<2.5V
V IOH=-0.4mA, 2.5VVcc<5.5V
“H” Output Voltage2
VOH2 Vcc-0.2
Vcc V IOH=-100µA, 1.7Vcc<2.5V
Input Leakage Current
ILI -1
1 μA VIN=0Vcc
Output Leakage Current
ILO
ICC1
Operating Current Write
ICC2
ICC3
ICC4
ICC5
ICC6
Operating Current Read
ICC7
ICC8
ICC9
ICC10
Standby Current
ISB
*1 BR25S320/640-W
*2 BR25S128/256-W
Radiation resistance design is not made
-1
1 μA VOUT=0Vcc, CSB=Vcc
0.5 *1
1 *2
mA
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
1 *1
1.5 *2
mA
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
2
3
*1
*2
mA
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
1
mA
Vcc=1.8V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
1
mA
Vcc=2.5V, fSCK=2MHz, SO=OPEN
Read, Read Status Register
1.5
mA
Vcc=2.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
2
mA
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
2
mA
Vcc=5.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
4
mA
Vcc=5.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
8
mA
Vcc=5.5V, fSCK=20MHz, SO=OPEN
Read, Read Status Register
2
μA
Vcc=5.5V, SO=OPEN
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/18
2010.12 - Rev.B
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BR25S640-W
Description SPI BUS
Maker Rohm
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BR25S640-W Datasheet PDF






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