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Rohm Semiconductor Electronic Components Datasheet

BR25L020-W Datasheet

High Reliability Serial EEPROM

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Rcaflga_jLmrc
High Reliability Serial EEPROMs
SPI BUS Serial EEPROMs
BR25˘˘˘˘family
BR25L010-W series, BR25L020-W series, BR25L040-W series, BR25L080-W series,
BR25L160-W series, BR25L320-W series, BR25L640-W series
Lm,/.../C@R.3
Description
BR25LŜŜŜ-W series is a serial EEPROM of SPI BUS interface method.
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
*1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8
*2 BR25L320/640-W : SOP8, SOP-J8
Page write
Number of
pages
16 Byte
Product
number
BR25L010-W
BR25L020-W
BR25L040-W
32 Byte
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
BR25L series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
64Kbit
Bit format
128 X 8
256 X 8
512 X 8
1K X 8
2K X 8
4K X 8
8K X 8
Type
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
Power source
voltage
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
SOP8
F
SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
FJ
FV
FVT
FVM
FVJ
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/16
2010.07 - Rev. B


Rohm Semiconductor Electronic Components Datasheet

BR25L020-W Datasheet

High Reliability Serial EEPROM

No Preview Available !

BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W Technical Note
Absolute maximum ratings (Ta = 25˚C)
Parameter Symbol
Limits
Unit
Impressed voltage
VCC
-0.3 ~ +6.5
V
450(SOP8) *1
Permissible
dissipation
450(SOP-J8) *2
Pd
300(SSOP-B8) *3 mW
330(TSSOP-B8) *4
310(MSOP8) *5
310(TSSOP-B8J) *6
Storage
temperature range
Tstg
-65 ~ +125
˚C
Operating
temperature range
Topr
-40 ~ +85
˚C
Terminal voltage
-0.3 ~ VCC+0.3
V
¢When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C
Recommended action conditions
Parameter
Symbol
Limits
Unit
Power source voltage
VCC
1.8 ~ 5.5
V
Input voltage
Vin
0 ~ VCC
Memory cell characteristics (Ta=25˚C, VCC=1.8 ~ 5.5V)
Parameter
Limits
Unit
Min.
Typ.
Max.
Number of data rewrite times *1 1,000,000
Times
Data hold years
*1
40
Years
*1:Not 100% TESTED
Input / output capacity (Ta=25˚C, frequency=5MHz)
Parameter Symbol Conditions Min.
Max.
Unit
Input capacity *1 CIN VIN=GND
8
pF
Output capacity*1 COUT VOUT=GND
8
pF
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta = 40 ~ +85˚C, VCC = 1.8 ~ 5.5V)
Parameter
Limits
Symbol Min. Typ. Max.
Unit
Conditions
"H" input voltage 1
VIH1
0.7x
VCC
VCC
+0.3
V
1.8VCC5.5V
"L" input voltage 1
"L" output voltage 1
"L" output voltage 2
"H" output voltage 1
VIL1
-0.3
0.3x
VCC
V
1.8VCC5.5V
VOL1
0
0.4
V
IOL=2.1mA(VCC=2.5V ~ 5.5V)
VOL2
0
0.2
V
IOL=150μA(VCC=1.8V ~ 2.5V)
VOH1
VCC
-0.5
VCC
V
IOH=-0.4mA(VCC=2.5V ~ 5.5V)
"H" output voltage 2
VOH2
VCC
-0.2
VCC
V
IOH=-100μA(VCC=1.8V ~ 2.5V)
Input leak current
ILI
-1
1
μA VIN=0 ~ VCC
Output leak current
ILO
-1
1
μA VOUT=0 ~ VCC,CS=VCC
VCC=1.8V,fSCK=2MHz,tE/W=5ms
Byte write
ICC1
1.0
mA Page write
Write status register
VCC=2.5V,fSCK=5MHz,tE/W=5ms
Current consumption at write
Byte write
action
ICC2
2.0
mA Page write
Write status register
VCC=5.5V,fSCK=5MHz,tE/W=5ms
Byte write
ICC3
3.0
mA Page write
Write status register
VCC=2.5V,fSCK=5MHz
ICC4
1.5
mA Read
Current consumption at read
Read status register
action
VCC=5.5V,fSCK=5MHz
ICC5
2.0
mA Read
Read status register
Standby current
ISB
2
μA
VCC=5.5V
CS=HOLD=WP=VCC,SCK=SI=VCC or =GND,SO=OPEN
Radiation resistance design is not made.
Block diagram
CS
SCK
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
SI
HOLD
INSTRUCTION
REGISTER
WP
SO
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
STATUS REGISTER
ADDRESS
REGISTER
ADDRESS
7~13bit *1 DECODER
7~13bit *1
DATA
REGISTER
READ/WRITE
8bit AMP
8bit
1K~64K
EEPROM
Fig.1 Block diagram
2/16
*1 7bit : BR25L010-W
8bit : BR25L020-W
9bit : BR25L040-W
10bit : BR25L080-W
11bit : BR25L160-W
12bit : BR25L320-W
13bit : BR25L640-W
2010.07 - Rev. B


Part Number BR25L020-W
Description High Reliability Serial EEPROM
Maker Rohm
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BR25L020-W Datasheet PDF






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