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Rohm Semiconductor Electronic Components Datasheet

BR25H160F-2LB Datasheet

Serial EEPROM Series Industrial EEPROM

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Datasheet
Serial EEPROM Series Industrial EEPROM
125Operation SPI BUS EEPROM
BR25H160F-2LB
General Description
This is the product guarantees long time support in Industrial market.
BR25H160F-2LB is a serial EEPROM of SPI BUS interface method.
Features
„ Long Time Support a Product for Industrial
Applications.
„ High speed clock action up to 10MHz (Max.)
„ Wait function by HOLDB terminal.
„ Part or whole of memory arrays settable as read only
memory area by program.
„ 2.5V to 5.5V single power source action most
suitable for battery use.
„ Page write mode useful for initial value write at
factory shipment.
„ For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
„ Self-timed programming cycle.
„ Low Supply Current
At write operation (5V)
: 1.0mA (Typ.)
At read operation (5V)
: 1.0mA (Typ.)
At standby operation (5V)
: 0.1μA (Typ.)
„ Address auto increment function at read operation
„ Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
„ Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
„ More than 100 years data retention.
„ More than 1 million write cycles.
Package
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
Application
Industrial Equipment
Page write
Number of pages
Product number
32 Byte
BR25H160F-2LB
BR25H160F-2LB
Capacity Bit Format
16Kbit
2Kx8
Product Number
BR25H160F-2LB
Supply Voltage
2.5V to 5.5V
Package
SOP8
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/28
TSZ02201-0R1R0G100340-1-2
27.Feb.2014 Rev.002


Rohm Semiconductor Electronic Components Datasheet

BR25H160F-2LB Datasheet

Serial EEPROM Series Industrial EEPROM

No Preview Available !

BR25H160F-2LB
Datasheet
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Remarks
Supply Voltage
VCC
-0.3 to +6.5
V
Permissible Dissipation
Pd
0.56
W When using at Ta=25or higher 4.5mW to be reduced per 1.
Storage Temperature Range
Tstg
-65+150
°C
Operating Temperature Range Topr
-40 to +125
°C
Terminal Voltage
-0.3 to VCC+0.3 V
Memory cell characteristics (VCC=2.5V to 5.5V)
Parameter
Min.
Write Cycles *1
1,000,000
500,000
300,000
Data Retention *1
100
60
*1: Not 100% TESTED
50
Recommended Operating Ratings
Parameter
Symbol
Supply Voltage
VCC
Input Voltage
Vin
Limits
Typ.
Max.
Limits
2.5 to 5.5
0 to VCC
Unit Condition
Cycles
Cycles
Cycles
Years
Years
Years
Ta85°C
Ta105°C
Ta125°C
Ta25°C
Ta105°C
Ta125°C
Unit
V
Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter
Symbol
Input Capacity *2
CIN
Output Capacity *2
*2: Not 100% TESTED
COUT
Conditions
VIN=GND
VOUT=GND
Min Max Unit
8
pF
8
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/28
TSZ02201-0R1R0G100340-1-2
27.Feb.2014 Rev.002


Part Number BR25H160F-2LB
Description Serial EEPROM Series Industrial EEPROM
Maker Rohm
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BR25H160F-2LB Datasheet PDF






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