BR24L32 Datasheet | ROHM

feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL,SDA for noise suppression. 14) Initial data FFh in all address. z Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Limits - 0.3 to +6.5 800(DIP8) 450(SOP8) Power dissipation Pd 450(SOP-J8) - 65 to +125 - 40 to +85 - 0.3 to VCC+0.3 ∗1 ∗2 ∗3 Unit V m W 300(SSOP-B8) ∗4 Storage temperature Operating temperature Terminal voltage Tstg Topr - °C °C ∗1 Degradation is done at 8.0m W/°C for operation above 25°C. ∗2,3 Degradation is done at 4.5m W/°C for operation above 25°C. ∗4 Degradation is done at 3.0m W/°C for operation above 25°C. 1/25 BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs z Remended operating conditions (Ta=25°C) Parameter Supply voltage Input voltage Symbol VCC VIN Limits 1.8 to 5.5 0 to VCC Unit V V z DC operating characteristics (Unless otherwise specified Ta=- 40 to 85°C, VCC=1.8 to 5.5V) Parameter "HIGH" input volatge 1 "LOW" input volatge 1 "HIGH" input volatge 2 "LOW" input volatge 2 "LOW" output volatge 1 "LOW" output volatge 2 Input leakage current Output leakage current Symbol VIH1 VIL1 VIH2 VIL2 VOL1 VOL2 ILI ILO ICC1 Operating current ICC2 Standby current ISB - - - - 0.5 2.0 m A µA Min. 0.7VCC - 0.8VCC - - - - 1 - 1 - Typ. - - - - - - - - - Max. - 0.3VCC - 0.2VCC 0.4 0.2 1 1 3.0 Unit V V V V V V µA µA m A Conditions < 5.5V < VCC = 2.5V= < 5.5V < VCC = 2.5V= <VCC = <2.5V 1.8V= < 2.5V <VCC = 1.8V= <5.5V, (SDA) < VCC = IOL=3.0m A, 2.5V= <5.5V, (SDA) < VCC = IOL=0.7m A, 1.8V= VIN=0V to VCC VOUT=0V to VCC VCC=5.5V, f SCL=400k Hz, t WR=5ms, Byte Write, Page Write VCC=5.5V, f SCL=400k Hz Random Read, Current Read, Sequential Read VCC=5.5V, SDA,SCL=VCC, A0,A1,A2=GND, WP=GND This product is not designed for protection against...