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Rohm Semiconductor Electronic Components Datasheet

BR24L32 Datasheet

4k8 bit electrically erasable PROM

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Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24Lxxx-W Series
(1K 2K 4K 8K 16K 32K 64K)
General Description
BR24Lxxx-W series is a serial EEPROM of I2C BUS interface method
Features
„ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
„ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
„ 1.8V to 5.5V *1 single power source action most
suitable for battery use
„ Page write mode useful for initial value write at
factory shipment
„ Highly reliable connection by Au pad and Au wire
„ Auto erase and auto end function at data write
„ Low current consumption
¾ At write operation (5V)
: 1.2mA (Typ.) *2
¾ At read operation (5V)
: 0.2mA (Typ.)
¾ At standby operation (5V) : 0.1μA (Typ.)
„ Write mistake prevention function
¾ Write (write protect) function added
„ Write mistake prevention function at low voltage
„ Data rewrite up to 1,000,000 times
„ Data kept for 40 years
„ Noise filter built in SCL / SDA terminal
„ Shipment data all address FFh
Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
*1 BR24L02-W, BR24L16-W, BR24L32-W : 1.7V to 5.5V
*2 BR24L32-W, BR24L64-W : 1.5mA
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Page write
Number of
Pages
Product
number
8Byte
BR24L01A-W
BR24L02-W
16Byte
BR24L04-W
BR24L08-W
BR24L16-W
32Byte
BR24L32-W
BR24L64-W
BR24Lxxx-W Series
Capacity
Bit
format
Type
Power source
Voltage
1Kbit 128×8 BR24L01A-W 1.8V to 5.5V
2Kbit 256×8 BR24L02-W 1.7V to 5.5V
4Kbit 512×8 BR24L04-W 1.8V to 5.5V
8Kbit 1K×8 BR24L08-W 1.8V to 5.5V
16Kbit 2K×8 BR24L16-W 1.7V to 5.5V
32Kbit 4K×8 BR24L32-W 1.7V to 5.5V
64Kbit 8K×8 BR24L64-W 1.8V to 5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8
MSOP8
TSSOP-B8J
VSON008
X2030
●●● ● ●
●●● ● ●
●●● ● ●
●●● ● ●
●●●
●●
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/36
TSZ02201-0R2R0G100290-1-2
21.AUG.2012 Rev.001


Rohm Semiconductor Electronic Components Datasheet

BR24L32 Datasheet

4k8 bit electrically erasable PROM

No Preview Available !

BR24Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K)
Datasheet
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Ratings
Supply Voltage
VCC -0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation Pd 330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
Storage Temperature
Tstg
65 to +125
Operating Temperature Topr
40 to +85
Terminal Voltage
-0.3 to Vcc+1.0
Unit
V
mW
V
Remarks
When using at Ta=25or higher 4.5mW to be reduced per 1.
When using at Ta=25or higher 4.5mW to be reduced per 1.
When using at Ta=25or higher 3.0mW to be reduced per 1.
When using at Ta=25or higher 3.3mW to be reduced per 1.
When using at Ta=25or higher 3.1mW to be reduced per 1.
When using at Ta=25or higher 3.1mW to be reduced per 1.
When using at Ta=25or higher 3.0mW to be reduced per 1.
Memory cell characteristics (Ta=25, Vcc=1.8V to 5.5V)*1
Parameter
Number of data rewrite times *2
Data hold years *2
Min.
1,000,000
40
Limits
Typ.
-
-
Shipment data all address FFh
*1 BR24L02/16/32-W : 1.7V to 5.5V
*2 Not 100% TESTED
Max.
-
-
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power source voltage
Vcc
Input voltage
VIN
*1 BR24L02/16/32-W : 1.7V to 5.5V
Ratings
1.8 to 5.5 *1
0 to Vcc
Unit
V
Electrical Characteristics (Unless otherwise specified, Ta=-40to +85, VCC=1.8V to 5.5V) *1
Parameter
Symbol
Limits
Min. Typ. Max.
Unit
Conditions
“HIGH” input voltage 1
VIH1 0.7Vcc - Vcc +1.0 *2 V 2.5Vcc5.5V
“LOW” input voltage 1
VIL1 -0.3 *2 - 0.3 Vcc V 2.5Vcc5.5V
“HIGH” input voltage 2
VIH2 0.8Vcc - Vcc +1.0 *2 V 1.8Vcc2.5V
“LOW” input voltage 2
VIL2 -0.3 *2 - 0.2 Vcc V 1.8Vcc2.5V
“HIGH” input voltage 3 *3
VIH3
0.8Vcc
- Vcc +1.0 V 1.7Vcc1.8V
“HIGH” input voltage 3 *4
VIH3
0.9Vcc
- Vcc +1.0 V 1.7Vcc1.8V
“LOW” input voltage 3 *2
VIL3
-0.3
- 0.1 Vcc V 1.7Vcc1.8V
“LOW” output voltage 1
VOL1
-
- 0.4 V IOL=3.0mA, 2.5VVcc5.5V, (SDA)
“LOW” output voltage 2
VOL2
-
- 0.2 V IOL=0.7mA, 1.7VVcc2.5V, (SDA)
Input leak current
ILI
-1 -
1 μA VIN=0V to Vcc
Output leak current
ILO -1 - 1 μA VOUT=0V to Vcc, (SDA)
2.0 *5
Current consumption at
ICC1
-
-
3.0 *6
mA
action
ICC2 - - 0.5 mA
Standby current
ISB - - 2.0 μA
*1 BR24L02/16/32-W : 1.7V to 5.5V, *2 BR24L16/32-W, *3 BR24L02/16-W, *4 BR24L32-W
*5 BR24L01A/02/04/08/16-W, *6 BR24L32/64-W
Vcc=5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
Vcc=5.5V,fSCL=400kHz
Random read, current read,sequential read
Vcc=5.5V, SDASCL=Vcc
A0, A1, A2=GND, WP=GND
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/36
TSZ02201-0R2R0G1000290-1-2
21.AUG.2012 Rev.001


Part Number BR24L32
Description 4k8 bit electrically erasable PROM
Maker Rohm
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BR24L32 Datasheet PDF






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