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BA12004B - Darlinton Transistor Array

Description

BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Features

  • Built-in 7 circuits.
  • High output break down voltage.
  • High DC output current gain.
  • Built-in input resistor to limit base current.
  • Built-in output surge absorption clamp diode Key Specifications.
  • Output break down voltage: VCE=60V(max).
  • Output current: Io=500mA/ch(max).
  • Operating supply voltage range: -0.5V to +30V.
  • Operating temperature range: -40°C to +85°C.
  • DC current gain: hfe=1000(min).
  • Input resistor: BA12003B/BF Rin=2.7kΩ.

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Datasheet Details

Part number BA12004B
Manufacturer ROHM
File Size 0.96 MB
Description Darlinton Transistor Array
Datasheet download datasheet BA12004B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet 7 Circuits Darlinton Transistor Array BA12003B BA12003BF BA12004B BA12004BF General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003B/BF Rin=2.7kΩ BA12004B/BF Rin=10.
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