Datasheet4U Logo Datasheet4U.com

BA12003BF - Darlinton Transistor Array

Description

BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Features

  • Built-in 7 circuits.
  • High output break down voltage.
  • High DC output current gain.
  • Built-in input resistor to limit base current.
  • Built-in output surge absorption clamp diode Key Specifications.
  • Output break down voltage: VCE=60V(max).
  • Output current: Io=500mA/ch(max).
  • Operating supply voltage range: -0.5V to +30V.
  • Operating temperature range: -40°C to +85°C.
  • DC current gain: hfe=1000(min).
  • Input resistor: BA12003B/BF Rin=2.7kΩ.

📥 Download Datasheet

Datasheet Details

Part number BA12003BF
Manufacturer ROHM
File Size 0.96 MB
Description Darlinton Transistor Array
Datasheet download datasheet BA12003BF Datasheet

Full PDF Text Transcription

Click to expand full text
Datasheet 7 Circuits Darlinton Transistor Array BA12003B BA12003BF BA12004B BA12004BF General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003B/BF Rin=2.7kΩ BA12004B/BF Rin=10.
Published: |