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Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics. 3) Complements the 2SB1424.
zStructure Epitaxial planar type NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3 IC
5
Collector power dissipation
PC
0.5 2
Junction temperature
Tj 150
Storage temperature
Tstg
∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.7mm Ceramic substrate.
−55 to +150
Unit V V V
A (DC)
A (Pulse) ∗1
W
W ∗2
°C °C
zDimensions(Unit : mm)
2SD2150
4.5+−00..21 1.6±0.1
1.5−+00..12
0.5±0.1
4.0±0.3 2.5+−00..21
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.
2SD2150 Datasheet
