2SB1713
Transistors
-3A / -12V Bipolar transistor
2SB1713 z Applications Low frequency amplification, driver z External dimensions (Unit : mm)
MPT3
4.5 1.6
1.5 z Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250m V, at IC = -1.5A, IB = -30m A)
(1)Base
(1)
(2)
(3)
2.5 4.0
0.4 1.5
0.5 1.5 3.0
0.4 z Structure PNP epitaxial planar silicon transistor
(2)Collector (3)Emitter
Abbreviated symbol : XW z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits
- 15
- 12
- 6
- 3
- 6 0.5 2 150
- 55 to +150
∗1 ∗2 ∗3 z Packaging specifications
Unit V V
..
Package Packaging type Code Part No. 2SB1713 Basic ordering unit (pieces)
MPT3 Taping T100 1000
W °C °C
∗1 Pw=1ms, Pulsed. ∗2 Each terminal mounted on a remended land. ∗3 Mounted on a...
