1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA)
(1)Base
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
zStructure PNP epitaxial planar silicon transistor
(2)Collector (3)Emitter
Abbreviated symbol : XW
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol V.
