2SB1713
Overview
- 5 4.0
- 4 1.5
- 5 1.5 3.0
- 4 zStructure PNP epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XW zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -15 -12 -6 -3 -6 0.5 2 150 -55 to +150 ∗1 ∗2 ∗3 zPackaging specifications Unit V V Package Packaging type Code Part No. 2SB1713 Basic ordering unit (pieces) MPT3 Taping T100 1000 V A W °C °C ∗1 Pw=1ms, Pulsed. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40×40×0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) ∗ hFE fT Cob Min. Typ. Max. Unit -12 -15 -6 - - - 270 - - - - - - - - 280 30 - - - -100 -100 680 - - nA mV - pF V IC= -1mA IC= -10µA IE= -10µA VCB= -15V VEB= -6V Conditions -120 -250 IC/IB= -1.5A/ -30mA VCE= -2V, IC= -500mA VCB= -10V , IE=0mA , f=1MHz MHz VCE= -2V, IE=500mA , f=100MHz 1/2 2SB1713 Transistors zElectrical characteristics curves
