2SB1316 - Power Transistor

ROHM

Key Features

1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO.
100.
100 Emitter-base voltage Collector current Collector 2SB1580 power dissipation 2SB1316 VEBO IC PC.
8.
2.
3 2 1 10 Junction temperature Tj 150 Storage temperat.

2SB1316 power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1316
Manufacturer	ROHM
File Size	510.91 KB
Description	Power Transistor
Datasheet	2SB1316 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SB1308	Power Transistor
2SB1326	Low Frequency Transistor
2SB1329	PNP Transistor
2SB1330	TRANSISTORS
2SB1331	TRANSISTORS

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Transistors Power Transistor (−100V , −2A) 2SB1316 2SB1316 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO −100 −100 Emitter-base voltage Collector current Collector 2SB1580 power dissipation 2SB1316 VEBO IC PC −8 −2 −3 2 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.