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Rohm Semiconductor Electronic Components Datasheet

1SS390 Datasheet

Band switching diode

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Data Sheet
Band Switching Diode
1SS390
Applications
High frequency switching
Dimensions (Unit : mm)
0.8±0.05
Features
1)Ultra small mold type. (EMD2)
2)High reliability
Land size figure (Unit : mm)
0.12±0.05
0.8
Construction
Silicon epitaxial
0.3±0.05
JEDEC :SOD-523
ROHM : EMD2
JEITA : SC-79
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
0.6±0.1
φ1.5±0.05
φ1.55±0.05
EMD2
Structure
0.2±0.05
00.9.905±±0.005.06
0
Empty pocket 4.0±0.1
2.0±0.05
φ0.5
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Forward current (DC)
Reverse voltage (DC)
Junction temperature
IF
VR
Tj
Storage temperature
Tstg
Limits
100
35
125
-55 to +125
Unit
mA
V
°C
°C
0.2
00.7.756±±0.005.05
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 1.0
IR - - 10
Capacitance between terminals
Ct - - 1.2
Forward operating resistance
rf - - 0.9
Unit Conditions
V IF=10mA
nA VR=25V
pF VR=6V , f=1MHz
IF=2mA , f=100MHz , RL=100
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.D


Rohm Semiconductor Electronic Components Datasheet

1SS390 Datasheet

Band switching diode

No Preview Available !

1SS390
Data Sheet
100
Ta=125℃
10
Ta=75℃
1
0.1
Ta=25℃
Ta=-25℃
100
10
1
0.1
0.01
0.001
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
FORWARD VOLTAGE:VF(V)
VF-IF CHARACTERISTICS
1.1 1.2
0.0001
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
35
10
1
0.1
0
f=1MHz
10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
860 0.2 1
Ta=25
IF=100mA
0.18
Ta=25℃
VR=25V
0.9
850
n=30pcs
0.16
n=30pcs
0.8
0.14 0.7
840 0.12 0.6
0.1 0.5
830 AVE:840.2mV
0.08
0.06 AVE:0.0145nA
0.4
0.3
820 0.04 0.2
0.02 0.1
810 0 0
AVE:0.849pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20 100 100
Ifsm 1cyc
15
8.3ms
10
10
10
AVE:4.95A
5
0
IFSM DISPERSION MAP
1 Ifsm
8.3ms 8.3ms
1cyc
0.1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
Ifsm
t
0.1
0.1
1 10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
100
10
1
0.001
Rth(j-a)
0.2
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
Sin(θ=180) D=1/2 DC
0.1
1ms time
300us
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.05 0.1 0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
0.2
DC
0.15
D=1/2
0.1
Sin(θ=180)
0.05
0
0
0A Io
0V
t
VR
D=t/T
VR=40V
T Tj=125℃
25 50 75 100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve(Io-Ta)
125
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.D


Part Number 1SS390
Description Band switching diode
Maker Rohm
PDF Download

1SS390 Datasheet PDF






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