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Rohm Semiconductor Electronic Components Datasheet

1SS376 Datasheet

Switching diode

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Diodes
Switching diode
1SS376
1SS376
!Applications
High voltage switching
!Features
1) Small surface mounting type. (UMD2)
2) VRM=300V guaranteed.
3) High reliability.
0.3±0.05
CATHODE MARK
0.1±0.05
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
1.25±0.1
Model identification label
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
0.7
+0.2
0.1
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Peak reverse voltage
DC reverse voltage
VRM
VR
Peak forward current
Mean rectifying current
IFM
IO
Surge current (10ms)
Isurge
Junction temperature
Storage temperature
Tj
Tstg
Limits
300
250
300
100
2
125
55~+125
Unit
V
V
mA
mA
A
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditons
Forward voltage
VF − − 1.2 V IF=100mA
Reverse current
IR − − 0.2 µA VR=250V
Reverse current
IR − − 100 µA VR=300V
Capacitance between terminals CT − − 3 pF VR=0V, f=1MHz
Reverse recovery time
trr − − 100 ns IR=30mA, IF=30mA, Irr=3mA


Rohm Semiconductor Electronic Components Datasheet

1SS376 Datasheet

Switching diode

No Preview Available !

Diodes
!Electrical characteristic curves (Ta = 25°C)
100m
10m
1m
200µ
0
0.5 1.0
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
100µ
10µ
125°C
1µ 75°C
100n
25°C
10n
2n
0 50 100 150 200 250 300
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
1SS376
1.2
1.1
1.0
0
10 20 30
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
60
40
20
0 20 40 60
FORWARD CURRENT : IF
Fig.4 Reverse recovery time
characteristics
Ta=25°C NON REPETITIVE
FORWARD SURGE
CURRENT IF (A)
PULSE WIDTH
10
5
P=50%
0
0.2 1
10 100 1000
PULSE WIDTH : TIME (ms)
Fig.5 Surge current characteristics
100
80
60
40
20
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Derating curve
(mounting on glass epoxy PCBs)


Part Number 1SS376
Description Switching diode
Maker Rohm
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1SS376 Datasheet PDF






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