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Rohm Semiconductor Electronic Components Datasheet

1SR159-200 Datasheet

Rectifier diode

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Diodes
Rectifier diode
1SR159-200
!Applications
High frequency rectification.
For switching power supply.
!Features
1) Small surface mounting type. (PMDS)
2) Low VF. (VF=0.90V Typ. at 1A)
3) High speed. (trr=23ns Typ.)
!Construction
Silicon epitaxial planar
1SR159-200
!External dimensions (Units: mm)
1.5±0.2
CATHODE MARK
63
34
0.1
+0.02
0.1
2.6±0.2
2.0±0.2
ROHM : PMDS
EIAJ :
JEDEC : SOD-106 1 2 Date code EX. 1999.19.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Absolute peak reverse voltage
Peak reverse voltage
Mean rectifying current1
Peak forward surge current2
Junction temperature
Storage temperature
Symbol
VRSM
VRM
IO
IFSM
Tj
Tstg
1 When mounted on an alumina PCB board 2 60 Hz for 1
Limits
200
200
1
20
150
55∼+150
Unit
V
V
A
A
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min.
Typ.
Max.
0.98
10
50
Unit Conditions
V IF=1.0A
µA VR=200V
ns IF =IR =100mA


Rohm Semiconductor Electronic Components Datasheet

1SR159-200 Datasheet

Rectifier diode

No Preview Available !

Diodes
!Electrical characteristic curves (Ta=25°C)
10.00
1000.0
Ta=125˚C
1.00 100.0
Ta=75˚C
0.10 10.0
0.01
Ta=125˚C Ta=75˚C Ta=25˚C
0.00
0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
1.0
Ta=25˚C
0.1
50
100 150
REVERSE VOLTAGE : VR (V)
200
Fig.2 Reverse characteristics
1SR159-200
0.8
1.5
0.5
0.3 sin
0.2
1.0 0.1
D=0.05
DC
0.5
0
0
IF
IO
Tp d= Tp
TT
0.4 0.8 1.2 1.6 2.0
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
Fig.3 Power dissipation curves
1.0
0.8
0.6
0.4
0.2
0
0 25 50
100 150 200
AMBIENT TEMPERATURE : Ta (˚C)
Fig.4 Derating curve
50
40
30
20
10 P=50%
0
12
5 10 20
CYCLES (60 Hz)
50 100
Fig.5 Maximum peak forward surge
current characteristics
0.1 IR
0.25 IR
10
5
0
0 0.5 1.0 1.5
FORWARD CURRENT IF (A)
Fig.6 Reverse recovery time
characteristics


Part Number 1SR159-200
Description Rectifier diode
Maker Rohm
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1SR159-200 Datasheet PDF






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