Datasheet4U Logo Datasheet4U.com

TBB1010 - Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-6 DataSheet4U. com Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2).

📥 Download Datasheet

Datasheet preview – TBB1010

Datasheet Details

Part number TBB1010
Manufacturer Renesas Electronics
File Size 155.71 KB
Description Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
Datasheet download datasheet TBB1010 Datasheet
Additional preview pages of the TBB1010 datasheet.

📁 Similar Datasheet

  • TBB1002 - Twin Build in Biasing Circuit MOS FET (HITACHI)
  • TBB1004 - Twin Build in Biasing Circuit MOS FET IC (Hitachi Semiconductor)
  • TBB1005 - Twin Built in Biasing Circuit MOS FET IC (Renesas)
  • TBB1008 - Twin Built in Biasing Circuit MOS FET IC (Renesas)
  • TBB1458 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBB1458B - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBB1458GG - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBB1469 - FM EMPFANGER IC (ETC)
  • TBB042G - Bipolar IC (ETC)
  • TBB0747 - DUAL OPERATIONAL AMPLIFIER (Siemens)
Other Datasheets by Renesas Technology
  • TBB1012 - Twin Built in Biasing Circuit MOS FET IC
  • TBB1016 - Twin Built in Biasing Circuit MOSFET
  • TBB1017 - Twin Built in Biasing Circuit MOS FET IC

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 DataSheet4U.com Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. 2. Marking is “KM”. TBB1010 is individual type number of HITACHI TWIN BBFET. DataSheet4U.com www.DataSheet4U.
Published: |