TBB1010 - Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
Renesas
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions.
Provide mini mold packages; CMPAK-6 DataSheet4U. com
Outline
CMPAK-6
6
5
4
2 1
3
1. Drain(1) 2. Source 3. Drain(2).
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TBB1010
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features
• • • • •
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS ×2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, DataShee Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 DataSheet4U.com
Outline
CMPAK-6
6
5
4
2 1
3
1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1)
Notes:
1. 2.
Marking is “KM”. TBB1010 is individual type number of HITACHI TWIN BBFET.
DataSheet4U.com
www.DataSheet4U.