RQA0001DNS fet equivalent, silicon n-channel mos fet.
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* High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) * Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8m.
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