RKS151KJ
RKS151KJ is Silicon Epitaxial Planar Diode manufactured by Renesas.
Features
- Low capacitance. (C = 0.8 p F max)
- Low forward resistance. (rf = 0.7 Ω max)
- Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. RKS151KJ Laser Mark K3 Package Name UFP Package Code (Previous Code) PWFS0002ZA-A (UFP)
Pin Arrangement
Cathode mark Mark 1
K3
2 1. Cathode 2. Anode
Rev.1.00 Nov 07, 2005 page 1 of 4
Absolute Maximum Ratings
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 35 150 125
- 55 to +125
..
(Ta = 25°C)
Unit V m W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Note: Symbol IR VF C rf Min
- -
- - Typ
- -
- - Max 50 1.0 0.8 0.7 Unit n A V p F Ω Test Condition VR = 25 V IF = 10 m A VR = 6 V, f = 1 MHz IF = 2 m A, f = 100 MHz
1. For UFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00 Nov 07, 2005 page 2 of 4
Main Characteristic
10- 2 10- 3 10- 7 10- 8
..
10- 5 10- 6 10- 7 10- 8 10- 9
Reverse current IR (A)
0 0.2 0.4 0.6 0.8 1.0
Forward current IF (A)
10- 4
10- 9 10- 10 10- 11 10- 12 10- 13 10-...
