RJL5015DPK switching equivalent, silicon n channel mos fet high speed power switching.
* Built-in fast recovery diode
* Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switchin.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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