RJK6006DPD datasheet, switching equivalent, Renesas Technology

RJK6006DPD switching equivalent, silicon n channel mos fet high speed power switching.

Features and benefits

* Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
* High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESA.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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