RJK5012DPE switching equivalent, silicon n channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
* Low leakage current
* High speed switching REJ03G1487-0300 Rev.3.00 May 12,.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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