RJK0852DPB fet equivalent, silicon n channel power mos fet.
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
RDS(on) = 9 m typ. (at VGS = 10.
* Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain cu.
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