logo

RJK0366DPA Datasheet, Renesas Technology

RJK0366DPA switching equivalent, silicon n channel power mos fet power switching.

RJK0366DPA Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 137.72KB)

RJK0366DPA Datasheet

Features and benefits

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.5 mΩ typ. (at VGS = 10 V)
* Pb-free
*
*.

Application

such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .

Image gallery

RJK0366DPA Page 1 RJK0366DPA Page 2 RJK0366DPA Page 3

TAGS

RJK0366DPA
Silicon
Channel
Power
MOS
FET
Power
Switching
Renesas Technology

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts