RJK0365DPA switching equivalent, silicon n channel power mos fet power switching.
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V)
* Pb-free
*
*.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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