RJE0605JPD datasheet, switching equivalent, Renesas Technology

RJE0605JPD switching equivalent, silicon p channel mos fet series power switching.

Features and benefits

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* Logic level operation (
–6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability ag.

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high juncti.

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